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| Cree(R) EZ700TM LED Data Sheet CXXXEZ700-SXX000 Cree's EZBrightTM LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 100 microns in height. Cree's EZTM chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES * EZBright Power Chip LED Rf Performance - - - * * * * * * 200 mW min. & 260 mW min. - 450 nm 180 mW min. & 240 mW min. - 460 nm 160 mW min. & 220 mW min. - 470 nm APPLICATIONS * General Illumination - - - - * * * * Aircraft Decorative Lighting Task Lighting Outdoor Illumination Lambertian Radiation Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach Thin 100 m Chip Low Forward Voltage - 3.6 V Typical at 350 mA Single Wire Bond Structure 1000 V ESD Threshold Rating White LEDs Crosswalk Signals Backlighting Automotive CXXXEZ700-SXX000 Chip Diagram Top View EZBright LED Chip 680 x 680 m Backside Metallization Gold Bond Pad 130 x 130 m Bottom View Die Cross Section .A CPR3DF Rev Data Sheet: Cathode (-) t = 100 m Anode (+); 3 m AuSn Subject to change without notice. www.cree.com Maximum Ratings at TA = 5C Note DC Forward Current Peak Forward Current LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold Rating (HBM) Note 2 CXXXEZ700-SXX000 500 mA 1000 mA Note 4 125C 5V -40C to +100C -40C to +120C 1000 V Note 3 Typical Electrical/Optical Characteristics at TA = 5C, If = 350 mA Part Number Forward Voltage (Vf, V) Min. C450EZ700-Sxx000 C460EZ700-Sxx000 C470EZ700-Sxx000 Mechanical Specifications Description P-N Junction Area (m) Chip Area (m) Chip Thickness (m) Top Au Bond Pad (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m) Back Contact Metal Thickness (m) 3.0 3.0 3.0 Typ. 3.6 3.6 3.6 Max. 3.9 3.9 3.9 Reverse Current [I(Vr=5 V), A] Max. 2 2 2 Full Width Half Max (D, nm) Typ. 21 21 22 CXXXEZ700-SXX000 Dimension 650 x 650 680 x 680 100 130 x 130 3.0 680 x 680 3.0 Tolerance 25 25 25 15 1.0 25 1.0 Notes: 1. 2. 3. 4. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. This peak forward current specification is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65C. Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com CPR3DF Rev. A Standard Bins for CXXXEZ700-SXX000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CXXXEZ700-SXX000) orders may be filled with any or all bins (CxxxEZ700-0xxx) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ700-S6000 C450EZ700-0221 C450EZ700-0222 C450EZ700-0218 C450EZ700-0223 C450EZ700-0219 C450EZ700-0224 C450EZ700-0220 Radiant Flux 300 mW 280 mW C450EZ700-0217 260 mW 445 nm 447.5 nm 450 nm Dominant Wavelength C450EZ700-S0000 452.5 nm 455 nm 260 mW Radiant Flux C450EZ700-0213 C450EZ700-0214 C450EZ700-0210 C450EZ700-0206 C450EZ700-0215 C450EZ700-0211 C450EZ700-0207 C450EZ700-0216 C450EZ700-0212 C450EZ700-0208 240 mW C450EZ700-0209 220 mW C450EZ700-0205 200 mW 445 nm 447.5 nm 450 nm Dominant Wavelength 452.5 nm 455 nm Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3DF Rev. A Standard Bins for CXXXEZ700-SXX000 (continued) Radiant Flux 280 mW C460EZ700-0217 C460EZ700-S4000 C460EZ700-0218 C460EZ700-0214 C460EZ700-0219 C460EZ700-0215 C460EZ700-0220 C460EZ700-0216 260 mW C460EZ700-0213 240 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C460EZ700-S8000 462.5 nm 465 nm 240 mW Radiant Flux C460EZ700-0209 C460EZ700-0210 C460EZ700-0206 C460EZ700-0202 C460EZ700-0211 C460EZ700-0207 C460EZ700-0203 C460EZ700-0212 C460EZ700-0208 C460EZ700-0204 220 mW C460EZ700-0205 200 mW C460EZ700-0201 180 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C470EZ700-S000 462.5 nm 465 nm 280 mW Radiant Flux C470EZ700-0217 C470EZ700-0218 C470EZ700-0214 C470EZ700-0210 C470EZ700-0219 C470EZ700-0215 C470EZ700-0211 C470EZ700-0220 C470EZ700-0216 C470EZ700-0212 260 mW C470EZ700-0213 240 mW C470EZ700-0209 220 mW 465 nm 467.5 nm 470 nm Dominant Wavelength C470EZ700-S6000 472.5 nm 475 nm Radiant Flux 220 mW C470EZ700-0205 C470EZ700-0206 C470EZ700-0202 C470EZ700-0207 C470EZ700-0203 C470EZ700-0208 C470EZ700-0204 200 mW C470EZ700-0201 160 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3DF Rev. A EZBright Power Chip LED CXXXEZ700-SXX000 Characteristic Curves These are representative measurements for the EZBright Power Chip LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Characteristic Curves 500 450 400 350 Forward Current vs Forward Voltage Relative Light Intensity vs Junction Temperature 100 Relative Light Intensity (%) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 95 If (mA) 300 250 200 150 100 50 0 90 85 80 75 Vf (V) 25 50 Junction Temperature (C) 75 100 125 120 Dominant Wavelength Shift (nm) 0 50 100 150 200 250 300 350 400 450 500 140 Relative Intensity vs Forward Current Dominant Wavelength Shift vs Junction Temperature 5 % Relative Intensity 100 80 60 40 20 0 4 3 2 1 0 25 50 If (mA) Junction Temperature (C) 75 100 125 Dominant Wavelength Shift vs Forward Current 3.0 2.5 0 Voltage Shift vs Junction Temperature 1.5 1.0 0.5 0.0 Voltage Shift (V) 0 50 100 150 200 250 300 350 400 450 500 2.0 -0.1 Shift (nm) -0.2 -0.3 -0.5 -0.4 25 50 If (mA) Junction Temperature (C) 75 100 125 CPR3DF Rev. (c) 2006 Cree, Inc. All Rights Reserved. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. 5 CPR3DF Rev. A Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 6 CPR3DF Rev. A |
Price & Availability of CXXXEZ700-SXX000
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